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ASI Semiconductor, Inc. Introduces a High Performance RF Power MOSFET Product Portfolio

ASI Semiconductor, Inc. Introduces a High Performance RF Power MOSFET Product Portfolio Based on VIMOS Technology, for Pulsed Radar and Avionics Applications.

ASI Semiconductor, Inc.

Longmont,Colorado (PR MediaRelease) February 23, 2015

ASI Semiconductor, Inc. (ASI) a manufacturer of high power radio frequency (RF) transistors, has introduced a portfolio of high performance state-of-the-art RF power MOSFETs for avionics, radar and other pulsed RF amplifier applications.

Chief Executive Officer, Fred Golob commented, “Pulsed high power RF amplifiers are uniquely demanding and have unique performance and reliability requirements relative to other high power applications. ASI’s VIMOSTM product portfolio has been designed from the ground up specifically for pulsed high power RF amplifiers, rather than adopting semiconductor technology developed for wireless base stations. We are very excited to bring this product to market.”

Reducing field failures and extending MTTF are critically important to Radar and Avionics RF systems. LDMOS technologies originally designed for other markets then adapted to high power pulsed applications have been impacted by failure mechanisms unique to pulsed operation, such as secondary break down. The ASI VIMOSTM devices build upon the technology developed at HVVi Semiconductor, Inc. VIMOSTM technology has been specifically designed for pulsed applications, optimizing design trade-offs and reducing field failures while achieving excellent RF performance. For example the HVV1011-600 produces 715 watts of RF output power at 1dB gain compression with 18dB of RF Gain. All devices meet 20:1 minimum VSWR, while being over driven by 3dB and exceeding the maximum recommended operating supply voltage by 10%.

The product line uses industry standard packages and consists of 18 enhancement mode MOSFET transistors operating across the standard pulsed frequency bands: 420 – 470 MHz, 960 MHz – 1215MHz, 1030-1090 MHz, 1025 – 1150 MHz, and 1200 – 1400 MHz at RF output power levels from 25watts to 1000 watts. Specific RF amplifier applications that will benefit from this technology include; L-Band Radar, Identification Friend Foe (IFF), Distance Measuring Equipment (DME), Tactical Collision Avoidance System (TCAS), Ground based Radar, Mode S-ELM (also known as Mode S-EL/M or Mode-Select ELM), Secondary Surveillance Radar (SSR), Mode-S, Mode ADS-B, Traffic information service – broadcast (TIS–B), and long range weather radar.

ASI Semiconductor, Inc. designs, manufactures and markets state-of-the-art high power, pulsed RF transistors and modules. The company was founded in 1979 and proudly serves thousands of customers in dozens of countries. Our headquarters is located in North Hollywood, CA, USA. For more information about ASI Semiconductor, Inc. visit our Web site at:, or send email to: To speak with us directly, call (818) 982-1200.

Andrea Fogle
ASI Semiconductor, Inc.
Assistant to the C.O.O.
Michael Lincoln
ASI Semiconductor, Inc.
Chief Operating Officer
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